The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
Good hFE linearity
Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
High fT frequency
Application
Linear and switching industrial equipment
屬性 | 數(shù)值 |
---|---|
晶體管類型 | NPN |
最大直流集電極電流 | 15 A |
最大集電極-發(fā)射極電壓 | 100 V |
封裝類型 | D2PAK |
安裝類型 | 表面貼裝 |
最大功率耗散 | 70 W |
最小直流電流增益 | 750 |
晶體管配置 | 共發(fā)射極 |
最大集電極-基極電壓 | 100 V |
最大發(fā)射極-基極電壓 | 5 V |
引腳數(shù)目 | 3 |
每片芯片元件數(shù)目 | 2 |