The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.
Fully characterized at 125 ?C
Very high switching speed
Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
Integrated free-wheeling diode
High voltage capability
Minimum lot-to-lot spread for reliable operation
Large RBSOA
Low spread of dynamic parameters
Applications
Electronic transformers for halogen lamps
Switch mode power supplies
| 屬性 | 數值 |
|---|---|
| 晶體管類型 | NPN |
| 最大直流集電極電流 | 16 A |
| 最大集電極-發射極電壓 | 700 V |
| 封裝類型 | D2PAK |
| 安裝類型 | 表面貼裝 |
| 最大功率耗散 | 80 W |
| 最小直流電流增益 | 8 |
| 晶體管配置 | 單 |
| 最大發射極-基極電壓 | 9 V |
| 引腳數目 | 3 |
| 每片芯片元件數目 | 1 |
